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| SSP1027 Elektronische Bauelemente -3.5 A, -20 V, RDS(ON) 97 m P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen and lead-free DESCRIPTION The SSP1027 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SSP1027 is universally used for all commercial-industrial applications. FEATURES Low On-Resistance Low Gate Charge PACKAGE DIMENSIONS TDFN S1 G1 D2 PIN#1 Indent J B D1 D2 I F G Bottom View C A D K H D1 G2 S2 E Side View REF. S1 G1 D2 1 2 3 6 5 4 D1 G2 S2 A B C D E Millimeter Min. Max. 1.900 2.100 1.900 2.100 0.650 0.800 REF. F G H I J K 0.203 REF 0.000 0.050 Millimeter Min. Max. 0.520 0.720 0.650 TYP 0.200 MIN 0.150 0.350 0.900 1.100 0.250 0.350 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 1 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 TJ, TSTG Ratings -20 12 -3.5 -2.8 -15 0.7 0.006 -55 ~ +150 Unit V V A A W W/ THERMAL DATA Parameter Thermal Resistance Junction-ambient3 (Max) Symbol RJA Ratings 98 Unit /W 01-June-2003 Rev. A Page 1 of 4 SSP1027 Elektronische Bauelemente -3.5 A, -20 V, RDS(ON) 97 m P-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Drain-Source Leakage Current (Tj=25) Drain-Source Leakage Current (Tj=70) BVDSS VGS(th) IGSS IDSS ID(on) gfs VSD -20 -0.35 -6 - 6 -0.8 76 97 123 -0.8 100 -1 -5 -0.2 95 120 145 V V nA uA A S V VGS = 0, ID = -250 uA VDS = VGS, ID = -250 uA VDS = 0 V, VGS = 12 V VDS = -20 V, VGS = 0 VDS = -20 V, VGS = 0, TJ = 55C VDS -5 V, VGS = -4.5 V VDS = -5 V, ID = -2.8 A IS = -1.5 A, VGS = 0 V VGS = -4.5 V, ID = -3.4 A On-State Drain Current Forward Transconductance Diode Forward Voltage Drain-Source On-Resistance RDS(ON) - m VGS = -2.5 V, ID = -2.4 A VGS = -1.8 V, ID = -1.7 A Dynamic Total Gate Charge 2 Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - 4.8 1.0 1.0 10 13 18 15 485 85 40 8 16 23 25 20 - Gate-Source Charge Gate-Drain Charge Turn-on Time Rise Time Turn-off Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 2. Pulse width300us, dutycycle2%. nC ID = -2.8 A VDS = -6 V VGS = -4.5 V VDD = -6 V ID = -1 A VGEN = -4.5 V RG = 6 RL = 6 VGS = 0 V VDS = -6 V f = 1.0 MHz nS pF 1. Pulse width limited by maximum junction temperature. 3. Surface mounted on 1 in copper pad of FR4 board; 180 C/W when mounted on minimum copper pad. 2 01-June-2003 Rev. A Page 2 of 4 SSP1027 Elektronische Bauelemente -3.5 A, -20 V, RDS(ON) 97 m P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES 01-June-2003 Rev. A Page 3 of 4 SSP1027 Elektronische Bauelemente -3.5 A, -20 V, RDS(ON) 97 m P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (con'd) 01-June-2003 Rev. A Page 4 of 4 |
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